Title :
CMOS BEOL-embedded z-axis accelerometer
Author :
Michalik, P. ; SaÌnchez-Chiva, J.M. ; FernaÌndez, D. ; Madrenas, J.
Author_Institution :
DEE, UPC, Barcelona, Spain
Abstract :
A first reported complementary metal-oxide semiconductor (CMOS)-integrated acceleration sensor obtained through isotropic inter-metal dielectric (IMD) etching of a back-end-of-line (BEOL) integrated circuit interconnection stack, without any additional substrate etching steps, is presented. The mechanical device composed of a CMOS-process 8 μm-thick metal-via-metal stack of 135 μm diameter and suspended 2.5 μm over a bottom fixed electrode, has a resonance frequency of 20 kHz, a sensing capacitance of 50 fF with sensitivity 14 aF/G and it is integrated on the same substrate with a simple low-noise amplifier reaching 25 mG of RMS noise measured from 0.25 to 100 Hz bandwidth.
Keywords :
CMOS integrated circuits; accelerometers; integrated circuit interconnections; microsensors; CMOS BEOL embedded z-axis accelerometer; CMOS integrated acceleration sensor; back-end-of-line; bandwidth 0.25 Hz to 100 Hz; capacitance 50 fF; complementary metal oxide semiconductor; frequency 20 kHz; integrated circuit interconnection stack; intermetal dielectric; isotropic IMD etching; metal-via-metal stack; size 135 mum; size 8 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.0140
