Title :
Remedies to control electromigration: Effects of CNT doped Sn-Ag-Cu interconnects
Author :
Sha Xu ; Xiaoxin Zhu ; Kotadia, H. ; Hua Lu ; Mannan, S.H. ; Bailey, Christopher ; Chan, Y.C.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
fDate :
May 29 2012-June 1 2012
Abstract :
Electromigration is a critical reliability problem in electronic industry, especially with the shrinkage and downscaling of microelectronic feature size, which results in gradual increase of current density. Carbon nanotube(CNT) doping is adopted in this paper. CNT has demonstrated high electromigration resistance. In our work, CNT doping is combined with SAC interconnects. A CNT after surfactant will be incorporated into SAC solder interconnection. Best percentage of CNT doping is found from this experiment, and better electromigration reliability can be observed from this work by SEM image. Moreover, the shear stress distribution is improved using computational study, which shows better mechanical properties. The combination of experimental and numerical study is highlighted in this work.
Keywords :
copper; electromigration; integrated circuit metallisation; integrated circuit reliability; semiconductor doping; silver; tin; CNT doping; SAC solder interconnection; SEM image; Sn-Ag-Cu; carbon nanotube; electromigration reliability; electromigration resistance; electronic industry; mechanical properties; microelectronic feature size; Electromigration; Flip chip; Powders; Soldering; Stress; Substrates;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2012.6249097
