DocumentCode :
2726018
Title :
Electron spectrum of δ-doped quantum wells by Thomas — Fermi method at finite temperatures
Author :
Grimalsky, V. ; Gaggero-S, L.M. ; Koshevaya, S. ; Garcia-B, A.
Author_Institution :
Fac. of Sci., Autonomous Univ. of State Morelos (UAEM), Cuernavaca, Mexico
fYear :
2010
fDate :
16-19 May 2010
Firstpage :
119
Lastpage :
122
Abstract :
Electron spectrum of δ-doped quantum well in n-GaAs is investigated by means of Thomas - Fermi (TF) method at finite temperatures. This method shows fast convergence and good accuracy. At 2D doping 1013...2 × 1013 cm-2, the simplest TF method (T = 0) can be used up till the temperatures T ≤ 200 K.
Keywords :
III-V semiconductors; Thomas-Fermi model; gallium arsenide; semiconductor doping; semiconductor quantum wells; δ-doped quantum wells; GaAs; Thomas-Fermi method; doping; electron spectrum; Atomic beams; Atomic layer deposition; Convergence; Effective mass; Electrons; Microelectronics; Molecular beam epitaxial growth; Poisson equations; Semiconductor device doping; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
Type :
conf
DOI :
10.1109/MIEL.2010.5490520
Filename :
5490520
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2726018
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