DocumentCode
272605
Title
Active cold load MMICs for Ka-, V-, and W-bands
Author
Kantanen, Mikko ; Weissbrodt, Ernst ; Varis, Jussi ; Leuther, Arnulf ; Seelmann-Eggebert, Matthias ; Rösch, Markus ; Schlecthweg, Michael ; Poutanen, Torsti ; Sundberg, Iiro ; Kaisti, Matti ; Altti, Miikka ; Jukkala, Petri ; Piironen, Petri
Author_Institution
MilliLab, VTT Tech. Res. Centre of Finland, Espoo, Finland
Volume
9
Issue
8
fYear
2015
fDate
6 5 2015
Firstpage
742
Lastpage
747
Abstract
Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.
Keywords
HEMT integrated circuits; MIMIC; MMIC; Ka-bands; V-bands; W-bands; active cold load MMIC circuits; frequency 31.4 GHz; frequency 52 GHz; frequency 89 GHz; metamorphic high electron mobility transistor technology; millimetre-wave frequency; noise temperature on-wafer measurements; reflection coefficients; size 100 nm; temperature 141 K; temperature 170 K; temperature 75 K;
fLanguage
English
Journal_Title
Microwaves, Antennas & Propagation, IET
Publisher
iet
ISSN
1751-8725
Type
jour
DOI
10.1049/iet-map.2014.0243
Filename
7115222
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