• DocumentCode
    2726084
  • Title

    Comparative studies of single- and double-nanocrystal layer NVM structures: Charge accumulation and retention

  • Author

    Turchanikov, V. ; Ievtukh, V. ; Nazarov, A. ; Lysenko, V. ; Theodoropoulou, M. ; Nassiopoulou, A.G.

  • Author_Institution
    Lashkaryov Inst. of Semicond. Phys., NASU, Kiev, Ukraine
  • fYear
    2010
  • fDate
    16-19 May 2010
  • Firstpage
    103
  • Lastpage
    104
  • Abstract
    Two types of NC NVM structures had been tested for W/E window formation, charge relaxation and retention. It was shown that the difference between two structures types is significant.
  • Keywords
    nanostructured materials; random-access storage; W/E window formation; charge accumulation; charge relaxation; charge retention; double-nanocrystal layer NVM structure; single-nanocrystal layer NVM structure; Current measurement; Data acquisition; Dielectric measurements; Dielectric substrates; Electrons; Nanocrystals; Nonvolatile memory; Pulse measurements; Space vector pulse width modulation; Thickness control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings (MIEL), 2010 27th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    978-1-4244-7200-0
  • Type

    conf

  • DOI
    10.1109/MIEL.2010.5490524
  • Filename
    5490524
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2726084