Title :
Comparative studies of single- and double-nanocrystal layer NVM structures: Charge accumulation and retention
Author :
Turchanikov, V. ; Ievtukh, V. ; Nazarov, A. ; Lysenko, V. ; Theodoropoulou, M. ; Nassiopoulou, A.G.
Author_Institution :
Lashkaryov Inst. of Semicond. Phys., NASU, Kiev, Ukraine
Abstract :
Two types of NC NVM structures had been tested for W/E window formation, charge relaxation and retention. It was shown that the difference between two structures types is significant.
Keywords :
nanostructured materials; random-access storage; W/E window formation; charge accumulation; charge relaxation; charge retention; double-nanocrystal layer NVM structure; single-nanocrystal layer NVM structure; Current measurement; Data acquisition; Dielectric measurements; Dielectric substrates; Electrons; Nanocrystals; Nonvolatile memory; Pulse measurements; Space vector pulse width modulation; Thickness control;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490524
