Title :
5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension
Author :
Elahipanah, Hossein ; Salemi, Arash ; Zetterling, Carl-Mikael ; Östling, Mikael
Author_Institution :
Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Stockholm, Sweden
Abstract :
Implantation-free 4H-SiC bipolar junction transistors with multiple-shallow-trench junction termination extension have been fabricated. The maximum current gain of 40 at a current density of 370 A/cm2 is obtained for the device with an active area of 0.065 mm2. A maximum open-base breakdown voltage (BV) of 5.85 kV is measured, which is 93% of the theoretical BV. A specific ON-resistance (RON) of 28 mΩ·cm2 was obtained.
Keywords :
bipolar transistors; semiconductor device breakdown; semiconductor device manufacture; silicon compounds; wide band gap semiconductors; BJT; bipolar junction transistors; multiple-shallow-trench junction termination extension; open-base breakdown voltage; voltage 5.8 kV; Annealing; Electric fields; Etching; Junctions; Silicon carbide; Transistors; Voltage measurement; 4H-SiC; 4H-SiC, multiple-shallow-trench JTE; high-voltage BJT; implantation-free; multiple-shallow-trench JTE;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2386317
