Low slow-wave effect and crosstalk for low-cost ABF-coated TSVs in 3-D IC interposer

Author

Chang, Yu-Jen ; Zheng, Tai-Yu ; Chuang, Hao-Hsiang ; Wang, Chuen-De ; Chen, Peng-Shu ; Kuo, Tzu-Ying ; Zhan, Chau-Jie ; Wu, Shih-Hsien ; Lo, Wei-Chung ; Lu, Yi-Chang ; Chiou, Yih-Peng ; Wu, Tzong-Lin

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2012

fDate

May 29 2012-June 1 2012

Firstpage

1934

Lastpage

1938

Abstract

A solution for reducing the signal distortion in SiO₂-coated through silicon vias (TSVs) is proposed. The mechanism can be explained by using a verified equivalent circuit model of a four-TSV system. Based on this circuit model, the phenomena that larger thickness of dielectric layer causes lower slow-wave factor (SWF), smaller insertion loss and smaller crosstalk level can be observed. With the aid of ajinomoto-build-up-film-coated (ABF-coated) TSVs, the solution can be implemented. The insertion loss is 3 dB better, the near-end crosstalk is 5 dB better, and the far-end crosstalk is 25dB better than conventional SiO₂-coated TSVs at 2 GHz. Measurement results are also given. Good consistency can be seen, and can support the conclusion of the simulation results.

Keywords

dielectric materials; equivalent circuits; silicon compounds; three-dimensional integrated circuits; 3D IC interposer; SiO₂; dielectric layer; equivalent circuit model; far-end crosstalk; frequency 2 GHz; loss 3 dB; low slow-wave effect; low-cost ajinomoto-build-up-film-coated TSV; near-end crosstalk; slow-wave factor; through-silicon-via technology; Crosstalk; Dielectrics; Equivalent circuits; Insertion loss; Integrated circuit modeling; Silicon; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd

Conference_Location

San Diego, CA

ISSN

0569-5503

Print_ISBN

978-1-4673-1966-9

Electronic_ISBN

0569-5503

Type

conf

DOI

10.1109/ECTC.2012.6249103

Filename

6249103