Title :
BJT static behavior improvement by modification of the epitaxial layer
Author :
Theolier, L. ; Phung, L.V. ; Batut, N. ; Schellmanns, A. ; Raingeaud, Y. ; Quoirin, J.-B.
Author_Institution :
Power Microelectron. Lab., Univ. of Tours, Tours, France
Abstract :
In this paper, high voltage Bipolar Junction Transistors are presented and compared in order to suggest a bidirectional switch for household appliances with fully turn-on, turn-off control. A comparative theoretical study, using 2D simulations, shows that concepts like “superjunctions” and “floating islands” improve the static current gain without unwanted behavior like parasitic diodes.
Keywords :
bipolar transistors; epitaxial layers; BJT static behavior improvement; bidirectional switch; epitaxial layer; floating islands; high voltage bipolar junction transistors; household appliances; parasitic diodes; static current gain; turn-off control; turn-on control; Conductivity; Current density; Diodes; Doping; Epitaxial layers; Home appliances; Microelectronics; Neodymium; Switches; Voltage control;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490530
