• DocumentCode
    2726266
  • Title

    Modeling the Post-Breakdown Current in MOS devices on p-silicon substrate

  • Author

    Ortiz-Conde, A. ; Miranda, E. ; Sanchez, F. J Garcia ; Farkas, E. ; Malobabic, S.

  • Author_Institution
    Solid State Electron. Lab., Simon Bolivar Univ., Caracas
  • fYear
    2006
  • fDate
    26-28 April 2006
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    A model for the post-breakdown leakage current in MOS p-silicon devices with ultra thin oxides is presented. The model is based on a combination of two ideal diodes and two resistances. Model parameters are extracted using nonlinear optimization
  • Keywords
    MOSFET; elemental semiconductors; leakage currents; semiconductor device breakdown; semiconductor device models; silicon; MOS devices; MOS p-silicon devices; Si; model parameters; nonlinear optimization; p-silicon substrate; post-breakdown leakage current; ultra thin oxides; Breakdown voltage; Circuit simulation; Current measurement; Current-voltage characteristics; Diodes; Electric breakdown; Equivalent circuits; MOS capacitors; MOS devices; Thickness measurement; Oxide breakdown; metal-oxide-semiconductor; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on
  • Conference_Location
    Playa del Carmen
  • Print_ISBN
    1-4244-0041-4
  • Electronic_ISBN
    1-4244-0042-2
  • Type

    conf

  • DOI
    10.1109/ICCDCS.2006.250828
  • Filename
    4016857
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2726266