DocumentCode :
2726321
Title :
Fast pulsed mode-locked lasers
Author :
Bente, Erwin ; Heck, Martijn ; Muñoz, Pascual ; Renault, Amandine ; Nötzel, Richard ; Smit, Meint
Author_Institution :
COBRA Res. Inst., Tech. Univ. Eindhoven, Eindhoven
fYear :
2008
fDate :
7-10 July 2008
Firstpage :
1
Lastpage :
4
Abstract :
InP integration technology and InAs/InP(100) quantum dot gain material are shown to be promising for realising fully integrated modelocked laser systems operating at 1.5 mum. Fast switching of output pulse parameters is possible with such systems.
Keywords :
III-V semiconductors; indium compounds; integrated optics; laser mode locking; optical pulse shaping; quantum dot lasers; semiconductor quantum dots; InAs-InP; fast pulsed mode-locked lasers; integration technology; optical pulse shaping; output pulse switching; quantum dot gain material; wavelength 1.5 mum; Biomedical optical imaging; Indium phosphide; Laser mode locking; Laser modes; Optical materials; Optical pulses; Optical sensors; Pulse amplifiers; Quantum dot lasers; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference, 2008 and the 2008 Australian Conference on Optical Fibre Technology. OECC/ACOFT 2008. Joint conference of the
Conference_Location :
Sydney
Print_ISBN :
978-0-85825-807-5
Electronic_ISBN :
978-0-85825-807-5
Type :
conf
DOI :
10.1109/OECCACOFT.2008.4610634
Filename :
4610634
Link To Document :
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