DocumentCode :
2726323
Title :
Growth of dielectric-embedded silicon nanocrystallites for silicon integrated photonics
Author :
Wong, H. ; Wong, C.K.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
fYear :
2010
fDate :
16-19 May 2010
Firstpage :
15
Lastpage :
19
Abstract :
Silicon integrated photonics has attracted much attentions recently because of the available of silicon-based quantum devices and optical components. Dielectric films with embedded silicon nanocrystallites (Si-NCs) have been recognized as one of the promising light-emitting materials for this purpose. This work reviews some attempts reported recently for preparing dielectric-embedded Si-NCs based on the conventional CMOS processes. The mechanism for the Si-NCs formation is discussed. The material and light emitting properties of the as-prepared Si-NC embedded in dielectric films are studied in detail.
Keywords :
integrated optics; nanostructured materials; optical elements; dielectric films; dielectric-embedded silicon nanocrystallites; optical components; quantum devices; silicon integrated photonics; Annealing; CMOS process; Dielectric films; Dielectric materials; Electrodes; Optical materials; Photonics; Plasma temperature; Silicon; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
Type :
conf
DOI :
10.1109/MIEL.2010.5490537
Filename :
5490537
Link To Document :
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