DocumentCode
2726333
Title
Quantum mechanical tunnelling in nanoelectronic circuits: Design of a nanoelectronic single-electron RAM
Author
Hagouel, Paul Isaac ; Karafyllidis, Ioannis G.
Author_Institution
Optelec, Thessaloniki, Greece
fYear
2010
fDate
16-19 May 2010
Firstpage
21
Lastpage
28
Abstract
Single-electronics is a nanoelectronic technology that makes possible the control of transport and position of a single or a small number of electrons. The fundamental physical principles of single-electronics are the quantum mechanical tunnelling and the Coulomb blockade. Bits of information are represented by the presence or absence of a single or a small number of electrons in conducting islands. The design and operation of two basic single-electron gates and the basic memory cell are presented. Furthermore, a single-electron random-access memory array is designed and its operation is analyzed using Monte Carlo simulation. Simulation shows that selective read and write operations can be performed in this memory array.
Keywords
Monte Carlo methods; nanoelectronics; random-access storage; single electron devices; tunnelling; Coulomb blockade; Monte Carlo simulation; basic memory cell; nanoelectronic circuits; nanoelectronic single-electron RAM; nanoelectronic technology; quantum mechanical tunnelling; single-electron gates; single-electron random-access memory array; single-electronics; Adders; CMOS technology; Circuit simulation; Electron traps; Logic circuits; Quantum mechanics; Random access memory; Read-write memory; Single electron memory; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location
Nis
Print_ISBN
978-1-4244-7200-0
Type
conf
DOI
10.1109/MIEL.2010.5490538
Filename
5490538
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