• DocumentCode
    2726333
  • Title

    Quantum mechanical tunnelling in nanoelectronic circuits: Design of a nanoelectronic single-electron RAM

  • Author

    Hagouel, Paul Isaac ; Karafyllidis, Ioannis G.

  • Author_Institution
    Optelec, Thessaloniki, Greece
  • fYear
    2010
  • fDate
    16-19 May 2010
  • Firstpage
    21
  • Lastpage
    28
  • Abstract
    Single-electronics is a nanoelectronic technology that makes possible the control of transport and position of a single or a small number of electrons. The fundamental physical principles of single-electronics are the quantum mechanical tunnelling and the Coulomb blockade. Bits of information are represented by the presence or absence of a single or a small number of electrons in conducting islands. The design and operation of two basic single-electron gates and the basic memory cell are presented. Furthermore, a single-electron random-access memory array is designed and its operation is analyzed using Monte Carlo simulation. Simulation shows that selective read and write operations can be performed in this memory array.
  • Keywords
    Monte Carlo methods; nanoelectronics; random-access storage; single electron devices; tunnelling; Coulomb blockade; Monte Carlo simulation; basic memory cell; nanoelectronic circuits; nanoelectronic single-electron RAM; nanoelectronic technology; quantum mechanical tunnelling; single-electron gates; single-electron random-access memory array; single-electronics; Adders; CMOS technology; Circuit simulation; Electron traps; Logic circuits; Quantum mechanics; Random access memory; Read-write memory; Single electron memory; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings (MIEL), 2010 27th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    978-1-4244-7200-0
  • Type

    conf

  • DOI
    10.1109/MIEL.2010.5490538
  • Filename
    5490538