Title :
A Simple Electrical RLC Crosstalk Model for Interconnects on Silicon
Author :
Huerta-Chua, Jesus ; Murphy-Arteaga, Roberto S.
Author_Institution :
Dept. of Electron., National Inst. for Res. on Astrophys., Opt. & Electron., Puebla
Abstract :
Crosstalk is generally recognized as a major problem in IC design. This paper presents the high-frequency characterization and modeling of a crosstalk-probe structure using a simple circuital RLC model. We demonstrate that a simple RLC circuit can accurately model all parasitic effects in interconnects on silicon. The structures were fabricated in AMIS 0.35mum C035M-A technology, using the two upper metal layers and SiO2 as the inter-level dielectric, and measured using a vector network analyzer in the 40 MHz to 50 GHz range
Keywords :
RLC circuits; crosstalk; elemental semiconductors; integrated circuit interconnections; integrated circuit modelling; silicon; silicon compounds; 0.04 to 50 GHz; 0.35 micron; RLC circuit; SiO2; crosstalk-probe structure; electrical RLC crosstalk model; high-frequency characterization; inter-level dielectric; parasitic effects; upper metal layers; vector network analyzer; Ambient intelligence; Crosstalk; Dielectrics; Electromagnetic coupling; Electromagnetic measurements; Frequency; Inductance; Integrated circuit interconnections; RLC circuits; Silicon;
Conference_Titel :
Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
1-4244-0041-4
Electronic_ISBN :
1-4244-0042-2
DOI :
10.1109/ICCDCS.2006.250833
