Response of Correlated Double Sampling CMOS Imager Circuit to Random Telegraph Signal Noise

Author

Leyris, C. ; Vildeuil, J.C. ; Roy, F. ; Martinez, Fabiola ; Valenza, M. ; Hoffmann, A.

Author_Institution

STMicroelectron., Crolles

fYear

2006

fDate

26-28 April 2006

Firstpage

109

Lastpage

114

Abstract

This paper presents analytical and experimental noise of a correlated double sampling (CDS) readout circuit used in CMOS active pixel image sensors. The work takes into account low frequency noise, mainly random telegraph signal (RTS) noise, in modern MOS transistors with very small geometries. The impact of the source-follower transistor noise power spectral density through CDS is studied. The results allow the determination of the output rms noise versus random telegraph signal noise characteristics. We show that R.T.S. noise of the source-follower is a major factor influencing the circuit output rms noise. Theoretical results are compared with experimental data

Keywords

CMOS image sensors; MOSFET; integrated circuit noise; readout electronics; semiconductor device noise; CMOS active pixel image sensors; MOS transistors; correlated double sampling readout circuit; random telegraph signal noise; source-follower transistor noise power spectral density; Active noise reduction; CMOS image sensors; Circuit noise; Image analysis; Image sampling; Image sensors; Low-frequency noise; MOSFETs; Pixel; Telegraphy;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

1-4244-0041-4

Electronic_ISBN

1-4244-0042-2

Type

conf

DOI

10.1109/ICCDCS.2006.250845

Filename

4016874