Title :
Response of Correlated Double Sampling CMOS Imager Circuit to Random Telegraph Signal Noise
Author :
Leyris, C. ; Vildeuil, J.C. ; Roy, F. ; Martinez, Fabiola ; Valenza, M. ; Hoffmann, A.
Author_Institution :
STMicroelectron., Crolles
Abstract :
This paper presents analytical and experimental noise of a correlated double sampling (CDS) readout circuit used in CMOS active pixel image sensors. The work takes into account low frequency noise, mainly random telegraph signal (RTS) noise, in modern MOS transistors with very small geometries. The impact of the source-follower transistor noise power spectral density through CDS is studied. The results allow the determination of the output rms noise versus random telegraph signal noise characteristics. We show that R.T.S. noise of the source-follower is a major factor influencing the circuit output rms noise. Theoretical results are compared with experimental data
Keywords :
CMOS image sensors; MOSFET; integrated circuit noise; readout electronics; semiconductor device noise; CMOS active pixel image sensors; MOS transistors; correlated double sampling readout circuit; random telegraph signal noise; source-follower transistor noise power spectral density; Active noise reduction; CMOS image sensors; Circuit noise; Image analysis; Image sampling; Image sensors; Low-frequency noise; MOSFETs; Pixel; Telegraphy;
Conference_Titel :
Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
1-4244-0041-4
Electronic_ISBN :
1-4244-0042-2
DOI :
10.1109/ICCDCS.2006.250845
