Dependence With Pressure And Temperature Of The Plasma Oxidation Mechanism Applied To Ultrathin Oxides

Recently we reported the possibility of using the room temperature plasma oxidation mechanism to obtain ultrathin silicon oxide films. The oxidation process in O₂ and N₂O can be modeled by power law dependence with time and is inversely proportional with pressure. On that work, the parameters that modeled the oxidation process were fitting parameters and were analyzed independently for each gas. In present work we derived a general expression to model plasma oxidation processes. In addition, the dependence of the oxidation rate with pressure and temperature were further specified so they are associated to physical mechanisms. Comparison of experimental curves with modeled, using this general expression, is presented