Title :
Effect of Nitrogen and Hydrogen on the Charge Trapping Properties of Silicon Rich Oxide
Author :
Yu, Zhenrui ; Aceves-Mijares, M. ; Carrillo, Jesus
Author_Institution :
Dept. of Electron., INAOE, Puebla
Abstract :
In this paper, the effect of nitrogen and hydrogen incorporation into silicon rich oxide (SRO) on its charge-trapping properties was studied. The samples were prepared by low pressure chemical vapor deposition (LPCVD) on Si substrates, and nitrogen was introduced into SRO adding NH3 to the reactive gases. Hydrogen was incorporated by low temperature annealing in forming gas. The charge properties of the nitrogenated/hydrogenated SRO were studied applying a DC voltage stress previous to high frequency C-V measurements. It was found that N2 increases significantly the charging density. An explanation is presented in order to interpret the experimental results
Keywords :
annealing; chemical vapour deposition; electron traps; elemental semiconductors; hydrogen; nitrogen; silicon; silicon compounds; DC voltage stress; H; LPCVD; N; NH3; charge properties; charge trapping properties; charging density; high frequency C-V measurements; hydrogenated SRO; low pressure chemical vapor deposition; low temperature annealing; nitrogenated SRO; reactive gases; silicon rich oxide; Annealing; Chemical vapor deposition; Frequency; Gases; Hydrogen; Nitrogen; Silicon; Stress; Temperature; Voltage;
Conference_Titel :
Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
1-4244-0041-4
Electronic_ISBN :
1-4244-0042-2
DOI :
10.1109/ICCDCS.2006.250854
