Title :
A General Analytical solution to the One-Dimensional Undoped Oxide-Silicon-Oxide System
Author :
Ortiz-Conde, Adelmo ; Sánchez, Francisco J García ; Muci, Juan ; Malobabic, Slavica
Author_Institution :
Solid State Electron. Lab., Univ. Simon Bolivar, Caracas
Abstract :
A physical model of the one-dimensional undoped oxide-silicon-oxide system is presented based on the solution of its surface potential versus distance. It is proved that both previous approximate analytical solutions, for the cases when the electric field does and does not vanish inside the semiconductor, are completely equivalent. Approximate asymptotic analytical solutions are presented and compared to exact results numerically calculated by iteration. The results attest to the excellent accuracy of this formulation
Keywords :
iterative methods; silicon compounds; silicon-on-insulator; surface potential; 1D undoped oxide-silicon-oxide system; O2-Si-O2; asymptotic analytical solutions; electric field; surface potential; CMOS technology; Circuits and systems; Laboratories; MOSFET circuits; Nanoscale devices; Poisson equations; Semiconductor films; Silicon on insulator technology; Solid modeling; Solid state circuits; Intrinsic channel; MOS compact modeling; SOI; Single MOSFET; Undoped body MOS;
Conference_Titel :
Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
1-4244-0041-4
Electronic_ISBN :
1-4244-0042-2
DOI :
10.1109/ICCDCS.2006.250857
