Title :
Microwave Amplification Using Space Charge Waves in Strained Si/SiGe Heterostructures at 77K
Author :
Garcia-B, Abel ; Grimalsky, Volodymyr ; Gutierrez, Edmundo A.
Author_Institution :
Electron. Dept., INAOE, Puebla
Abstract :
Based on the negative differential conductance phenomenon, we theoretically investigate the propagation and amplification of space charge waves on the surface of a strained Si/SiGe heterostructure at 77 K. A comparison between the n-GaAs thin film and strained Si/SiGe heterostructure of this amplification effect is included as well. We have obtained 2D results of the propagation and amplification of space charge waves in a strained Si/SiGe heterostructure up to a frequency f of 40 GHz
Keywords :
Ge-Si alloys; III-V semiconductors; amplification; elemental semiconductors; gallium arsenide; millimetre wave amplifiers; millimetre wave bipolar transistors; silicon; space charge waves; wave propagation; 77 K; GaAs; Si-SiGe; amplification effect; microwave amplification; n-GaAs thin film; negative differential conductance phenomenon; space charge waves; strained Si/SiGe heterostructures; BiCMOS integrated circuits; Conductivity; Electron mobility; Frequency; Germanium silicon alloys; Microwave antennas; Poisson equations; Silicon germanium; Space charge; Surface waves;
Conference_Titel :
Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
1-4244-0041-4
Electronic_ISBN :
1-4244-0042-2
DOI :
10.1109/ICCDCS.2006.250858
