Title :
Recent developments in long wavelength VCSELs based on localized wafer fusion
Author :
Kapon, E. ; Sirbu, A. ; Iakovlev, V. ; Mereuta, A. ; Caliman, A. ; Suruceanu, G.
Author_Institution :
Swiss Fed. Inst. of Technol. Lausanne (EPFL), Lausanne, Switzerland
fDate :
June 28 2009-July 2 2009
Abstract :
We review recent results on wafer fused long wavelength VCSELs emitting in the 1310 - 2000 nm range. This technology allows reaching fundamental mode output in excess of 4.5 mW at room temperature and close to 3 mW at 70degC for both the 1310 nm and 1550 nm wavebands-the highest values obtained so far. Emission wavelength can be tuned continuously with current with a tuning range as large as 15 nm. For 2000 nm emission wavelength, room temperature output is ~ 0.5 mW, limited so far by high optical absorption in the cavity. 1310 nm-VCSELs that are optimized for high speed operation yield excellent 10 Gbps operation both at room temperature and at 100degC.
Keywords :
laser cavity resonators; laser modes; laser tuning; surface emitting lasers; bit rate 10 Gbit/s; fundamental mode output; fused long wavelength VCSELs; high speed operation; localized wafer fusion; optical absorption; room temperature; temperature 100 degC; temperature 293 K to 298 K; temperature 70 degC; tuning range; wavelength 1310 nm to 2000 nm; High speed optical techniques; Laser modes; Laser tuning; Optical modulation; Optical sensors; P-n junctions; Power generation; Stimulated emission; Temperature; Vertical cavity surface emitting lasers; eye-diagrams; large signal modulation; long-wavelength VCSELs; resonant frequency; single-mode output power; wavelength tuning;
Conference_Titel :
Transparent Optical Networks, 2009. ICTON '09. 11th International Conference on
Conference_Location :
Azores
Print_ISBN :
978-1-4244-4825-8
Electronic_ISBN :
978-1-4244-4827-2
DOI :
10.1109/ICTON.2009.5185024