DocumentCode
2726896
Title
Temperature reduction in vertical-external-cavity surface-emitting-lasers (VECSEL) active region
Author
Wasiak, M. ; Sarzala, R.P. ; Jasik, Agata
Author_Institution
Inst. of Phys., Tech. Univ. of Lodz, Lodz, Poland
fYear
2009
fDate
June 28 2009-July 2 2009
Firstpage
1
Lastpage
3
Abstract
In this paper we present results of the numerical modelling of the temperature distribution in a GaAs-based, continuously optically pumped Vertical-External-Cavity Surface-Emitting-Laser, emitting at about 980 nm. Effectiveness of different methods of the temperature reduction in the active region, such as substrate thinning and using a heat spreader, is presented and compared.
Keywords
III-V semiconductors; gallium arsenide; laser beam effects; surface emitting lasers; temperature distribution; GaAs; heat spreader; substrate thinning; temperature distribution; temperature reduction; vertical external cavity surface emitting lasers VECSEL; wavelength 980 nm; Distributed Bragg reflectors; Gallium arsenide; Heat pumps; Heat sinks; Laser modes; Optical surface waves; Pump lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Transparent Optical Networks, 2009. ICTON '09. 11th International Conference on
Conference_Location
Azores
Print_ISBN
978-1-4244-4825-8
Electronic_ISBN
978-1-4244-4827-2
Type
conf
DOI
10.1109/ICTON.2009.5185028
Filename
5185028
Link To Document