Phase locked harmonics etalon localization in opaque materials

Author

Cojocaru, C. ; Roppo, V. ; Aguanno, G.D. ; Raineri, F. ; Trull, J. ; Raj, R. ; Vilaseca, R. ; Scalora, M.

Author_Institution

Dept. de Fis. i Eng. Nucl., Univ. Politec. de Catalunya, Terrassa, Spain

fYear

2009

fDate

June 28 2009-July 2 2009

Firstpage

1

Lastpage

2

Abstract

In this work we investigate the behaviour of the phase locked second and third harmonic generated and propagating within a cavity of GaAs designed to be resonant for the fundamental field. We show that not only that the phase locked harmonics components are transmitted trough an opaque material (inhibition of the absorption), but also that the conversion efficiency of this harmonics is substantially increased.

Keywords

III-V semiconductors; gallium arsenide; light interferometry; optical design techniques; optical harmonic generation; optical materials; GaAs; conversion efficiency; gallium arsenide cavity design; opaque material; phase locked harmonics components; phase locked harmonics etalon localization; phase locked second harmonic generation; phase locked third harmonic generation; Absorption; Displays; Gallium arsenide; Mirrors; Nonlinear optics; Optical harmonic generation; Optical materials; Optical propagation; Partial differential equations; Resonance; harmonic generation; nonlinear optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2009. ICTON '09. 11th International Conference on

Conference_Location

Azores

Print_ISBN

978-1-4244-4825-8

Electronic_ISBN

978-1-4244-4827-2

Type

conf

DOI

10.1109/ICTON.2009.5185049

Filename

5185049