Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance

Author

Schwaha, P. ; Heinzl, R. ; Grasser, Tibor ; Brezna, W. ; Smoliner, J.

Author_Institution

CDL-IUE TU Wien, Vienna

fYear

2006

fDate

26-28 April 2006

Firstpage

365

Lastpage

369

Abstract

It is shown that surface roughness becomes increasingly important as oxide thicknesses decrease. Silicon-silicon dioxide capacitances with thicknesses of 7 nm, 15 nm, and 50 nm are measured with an atomic force microscope (AFM). The height data thusly obtained is used to create three dimensional simulation structures to reproduce measurement data obtained from leakage current measurements. The leakage currents are simulated using the Fowler-Nordheim (FN) tunnelling current model

Keywords

atomic force microscopy; electric current measurement; leakage currents; semiconductor device breakdown; semiconductor device models; surface roughness; 15 nm; 3D simulation structures; 50 nm; 7 nm; Fowler-Nordheim tunnelling current model; atomic force microscope; leakage current analysis; leakage current measurements; oxide thickness; silicon-silicon dioxide capacitance; surface roughness; Atomic force microscopy; Atomic measurements; Capacitance measurement; Current measurement; Force measurement; Leakage current; Rough surfaces; Surface roughness; Thickness measurement; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

1-4244-0041-4

Electronic_ISBN

1-4244-0042-2

Type

conf

DOI

10.1109/ICCDCS.2006.250888

Filename

4016917