Study of ESD evaluation methods for charged device model

Author

Wada, Tetsuaki

Author_Institution

Matsushita Electron. Corp., Nagaokakyo, Japan

fYear

1995

fDate

12-14 Sept. 1995

Firstpage

186

Lastpage

193

Abstract

Through the investigation of several evaluation methods for CDM ESD, the following results have been found. 1. Although the waveforms of SCM (Small Capacitance Method: 10 pF, 0 /spl Omega/) and three commercial CDM equipments are different, the destructive voltage for dielectric failure is equivalent. SCM is an efficient and easy test method for high speed ESD evaluation. 2. It is necessary to apply a different ESD protection strategy and circuit for CDM and SCM than for HBM. 3. The destructive voltage for memory devices on the market ranges from 350 to 4000 V. Although CDM and SCM are efficient test methods for scaled semiconductor devices, there are several problems at present (for example the measurement method of the waveform and the specification of the destructive voltage).

Keywords

capacitance; electrostatic discharge; failure analysis; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; protection; semiconductor device models; semiconductor device reliability; semiconductor device testing; test equipment; 350 to 4000 V; ESD evaluation methods; ESD protection strategy; charged device model; destructive voltage; dielectric failure; high speed ESD evaluation; memory devices; scaled semiconductor devices; small capacitance method; Capacitance; Circuit testing; Dielectrics; Electrostatic discharge; Protection; Semiconductor device measurement; Semiconductor device testing; Semiconductor devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1995

Conference_Location

Phoenix, AZ, USA

Print_ISBN

1-878303-59-7

Type

conf

DOI

10.1109/EOSESD.1995.478283

Filename

478283