A 3-10 GHz Low-Noise Amplifier for Ultra-Wideband Applications

Author

Moez, Kambiz K. ; Elmasry, Mohamed I.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.

fYear

2006

fDate

18-21 June 2006

Firstpage

9

Lastpage

12

Abstract

This paper presents a new methodology for the design of low noise amplifiers for ultra wideband applications. Using the unwanted effect of the gate-drain capacitor of transistors on the input impedance to our benefit, the operation of the conventional narrowband LNA is extended to provide a very good input matching from 3 GHz to 10 GHz. Using a triple-resonance circuit as the drain impedance, a relatively flat gain is also achieved over the same operation band. A power gain of 8 dB, with good input and output matching (S₁₁< -14 dB and S₂₂ < -14 dB) is achieved over a 3 to 10 GHz band in 0.13 mum CMOS technology

Keywords

CMOS integrated circuits; integrated circuit design; low noise amplifiers; microwave amplifiers; 0.13 micron; 3 to 10 GHz; 8 dB; CMOS technology; drain impedance; gate-drain capacitor; low noise amplifier; transistors; triple-resonance circuit; ultra wideband amplifier; Broadband amplifiers; CMOS technology; Capacitors; Circuit noise; Design methodology; Gain; Impedance matching; Low-noise amplifiers; Narrowband; Ultra wideband technology; low-noise amplifiers; s-parameters; ultra wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006 IEEE North-East Workshop on

Conference_Location

Gatineau, Que.

Print_ISBN

1-4244-0416-9

Electronic_ISBN

1-4244-0417-7

Type

conf

DOI

10.1109/NEWCAS.2006.250907

Filename

4016938