DocumentCode
2727865
Title
Vertical metal interconnect thanks to tungsten direct bonding
Author
Di Cioccio, Léa ; Gueguen, Pierric ; Grouiller, Etienne ; Vandroux, Laurent ; Delaye, Vincent ; Rivoire, Maurice ; Lugand, Jean François ; Clavelier, Laurent
Author_Institution
LETI, CEA, Grenoble, France
fYear
2010
fDate
1-4 June 2010
Firstpage
1359
Lastpage
1363
Abstract
Localized metal bonding is one of the main drivers for 3D technology implementation as it allows high vertical interconnection densities between piled up dies. In this paper we will present the direct bonding of tungsten blanket. The copper and tungsten direct bonding will be compared in terms of bonding mechanism and temperature dependence.
Keywords
Atomic force microscopy; Bonding forces; Copper; Pollution measurement; Rough surfaces; Surface roughness; Temperature dependence; Tin; Tungsten; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location
Las Vegas, NV, USA
ISSN
0569-5503
Print_ISBN
978-1-4244-6410-4
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2010.5490643
Filename
5490643
Link To Document