A DECT transceiver chip set using SiGe technology

Author

Bopp, M. ; Alles, Michael ; Arens, Michael ; Eichel, Dirk ; Gerlach, Stephan ; Gotzfried, R. ; Gruson, F. ; Kocks, M. ; Krimmer, G. ; Reimann, R. ; Roos, B. ; Siegle, M. ; Zieschang, J.

Author_Institution

TEMIC Semicond. GmbH, Germany

fYear

1999

fDate

17-17 Feb. 1999

Firstpage

68

Lastpage

69

Abstract

A fully-integrated RF-transceiver for DECT comprises two bipolar ICs including power amplifier, low-noise amplifier and VCO. Nonblind-slot and multi-slot capability is achieved by closed-loop modulation. The complete transceiver, which operates from 2.7 to 5 V, avoids mechanical tuning, and requires <50 external components.

Keywords

Ge-Si alloys; UHF power amplifiers; bipolar analogue integrated circuits; closed loop systems; cordless telephone systems; semiconductor materials; transceivers; voltage-controlled oscillators; 1.9 GHz; 2.7 to 5 V; DECT transceiver chip set; SiGe; VCO; bipolar ICs; closed-loop modulation; low-noise amplifier; multi-slot capability; nonblind-slot capability; power amplifier; Counting circuits; Germanium silicon alloys; Land mobile radio; Mobile communication; Phase modulation; Radio frequency; Radio transceivers; Silicon germanium; Telephony; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

0-7803-5126-6

Type

conf

DOI

10.1109/ISSCC.1999.759104

Filename

759104