Title :
ESD reliability impact of p+ pocket implant on double implanted NLDD MOSFET
Author :
Consiglio, Rosario ; Huang, Tiao Yuan
Author_Institution :
VLSI Technol. Inc., San Jose, CA, USA
Abstract :
An ESD study was conducted on a process using an arsenic NLDD, a boron pocket implant, and an 90 angstrom gate oxide. Increasing the boron pocket and arsenic NLDD implant doses increased the ESD robustness of the NMOST. However, heavier B11 pocket implants of 1.5E13 atoms/cm/sup 2/ were found to create parasitic n-p-n bipolar transistors under the n-well tap diffusions, increasing n-well tap resistance.
Keywords :
CMOS integrated circuits; MOSFET; boron; electrostatic discharge; integrated circuit reliability; ion implantation; semiconductor device reliability; 90 A; As LDD implant dose; B pocket implant; ESD reliability; NMOSFET; Si:As; Si:B; double implanted LDD MOSFET; gate oxide; lightly doped drain; n-well tap diffusions; p/sup +/ pocket implant; parasitic n-p-n bipolar transistors; Bipolar transistors; Boron; Electrostatic discharge; Implants; Robustness;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1995
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
1-878303-59-7
DOI :
10.1109/EOSESD.1995.478285
