• DocumentCode
    2728065
  • Title

    Micromechanics and damage processes in interconnect structures

  • Author

    Hsing, A.W. ; Kearney, A.V. ; Li, L. ; Xue, J. ; Brillhart, M. ; Dauskardt, R.H.

  • Author_Institution
    Dept. of Mater. Sci., Stanford Univ., Stanford, CA, USA
  • fYear
    2010
  • fDate
    1-4 June 2010
  • Firstpage
    1303
  • Lastpage
    1308
  • Abstract
    Packaging advanced silicon devices has become increasingly challenging because the effects of stresses exerted on interconnect structures during package assembly and operation are not well understood. In this study, a microprobe metrology system is used to assess the mechanics of these interconnect structures. This allows for a better understanding of the robustness of an interconnect design and the stresses that can be tolerated before damage initiation.
  • Keywords
    Mechanical factors; Mechanical variables measurement; Metrology; Microelectronics; Packaging; Probes; Residual stresses; Silicon; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4244-6410-4
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2010.5490653
  • Filename
    5490653