DocumentCode
2728065
Title
Micromechanics and damage processes in interconnect structures
Author
Hsing, A.W. ; Kearney, A.V. ; Li, L. ; Xue, J. ; Brillhart, M. ; Dauskardt, R.H.
Author_Institution
Dept. of Mater. Sci., Stanford Univ., Stanford, CA, USA
fYear
2010
fDate
1-4 June 2010
Firstpage
1303
Lastpage
1308
Abstract
Packaging advanced silicon devices has become increasingly challenging because the effects of stresses exerted on interconnect structures during package assembly and operation are not well understood. In this study, a microprobe metrology system is used to assess the mechanics of these interconnect structures. This allows for a better understanding of the robustness of an interconnect design and the stresses that can be tolerated before damage initiation.
Keywords
Mechanical factors; Mechanical variables measurement; Metrology; Microelectronics; Packaging; Probes; Residual stresses; Silicon; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location
Las Vegas, NV, USA
ISSN
0569-5503
Print_ISBN
978-1-4244-6410-4
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2010.5490653
Filename
5490653
Link To Document