• DocumentCode
    2728281
  • Title

    Fabrication and characterization of embedded active and passive device for wireless application

  • Author

    Park, Se-Hoon ; Ryu, Jong-In ; Kim, Jun Chul ; Kang, Nam Kee ; Park, Jong Chul ; Kim, Young-Ho

  • Author_Institution
    Syst. Packaging Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea
  • fYear
    2010
  • fDate
    1-4 June 2010
  • Firstpage
    2035
  • Lastpage
    2041
  • Abstract
    In this study, the research of embedded active and passive package is carried out for miniaturized wireless module. We fabricated very small RF module which one bare chip (0.3mm × 0.5mm, SPDT switch IC) and three 0603(0.6mm × 0.3mm, MLCC) passive devices were buried into within 1.85mm × 1.5mm substrate. Used materials were compatible with PCB process such as polymer laminating, dry film patterning, electroless-electrolytic copper plating and atmospheric plasma treatment. We studied low pressure bonding process using rheology dependence of polymer on temperature to prevent fracture or crack from embedding chips into PCB. The embedded chip and passives were electrically interconnected by small laser via(30µm) and Cu pattern plating process after atmospheric pressure plasma treatment, which revealed an effect on filling of micro via and shape of fine pattern. The interconnection between chip pad and Cu were evaluated by SEM image, which shows Cu pattern of PCB and pad of passive was interconnected without intermetallic formation. However, intermetallic, Cu-Sn-Ni, formed between passive electrode and plated Cu layer, and molten Sn is segregated along the wall of via hole after reflow. DSC (Differenntial Scanning Calorimetry) analysis was employed to calculate and optimize the amount of curing. Polymer showed maximum 90° peel strength (~0.7kgf/cm) with Cu pattern when Cu is plated on polymer after pre-curing was 80~90% completed. The RF characterization of embedded chip PCB was evaluated by measuring s-parameters (S11; return loss and S21; insertion loss). Return loss was below 20dB up to 4GHz. As a results, the embedded chip module is able to be applied for 2~5 GHz frequency application (Bluetooth and WiFi) with small size and good performance.
  • Keywords
    Atmospheric-pressure plasmas; Copper; Fabrication; Insertion loss; Intermetallic; Plasma applications; Plasma temperature; Polymer films; Radio frequency; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4244-6410-4
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2010.5490663
  • Filename
    5490663