Title :
Multi-mode and multi-level technologies for FeRAM embedded reconfigurable hardware
Author :
Asari, K. ; Mitsuyama, Y. ; Onoye, T. ; Shirakawa, I. ; Hirano, H. ; Honda, T. ; Otsuki, T. ; Baba, T. ; Meng, T.
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
Programmability of circuit function is one of the most important features of modern-day VLSIs in terms of flexibility for multiple applications and redundancy against design failures. Ferroelectric non-volatile memory (FeRAM) as a novel reconfigurable engine not only allows a fast write time and low power consumption, but also leads to high efficiency of memory usage. The memory in a FeRAM-based reconfigurable hardware can be used for storing the logic configuration data, the instructions for embedded processors, and at the same time serves as a RAM for data accessing. An array of reconfigurable elements based on FeRAM can be arranged where a microprocessor unit (MPU) is located at the center of the chip, while reconfigurable array elements are located around the rest of the chip. The switching elements connect the reconfigurable array elements to each other. A set of multiple configuration data for each array element is stored locally in the FeRAM.
Keywords :
VLSI; embedded systems; ferroelectric storage; integrated circuit design; low-power electronics; multivalued logic; random-access storage; reconfigurable architectures; FeRAM embedded reconfigurable hardware; VLSI; array elements; circuit function programmability; design failures; ferroelectric non-volatile memory; memory usage; multi-level technologies; multi-mode technologies; power consumption; reconfigurable engine; switching elements; write time; Energy consumption; Engines; Ferroelectric films; Ferroelectric materials; Flexible printed circuits; Hardware; Nonvolatile memory; Random access memory; Reconfigurable logic; Very large scale integration;
Conference_Titel :
Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5126-6
DOI :
10.1109/ISSCC.1999.759153