Title :
Multi-phase-driven split-word-line ferroelectric memory without plate line
Author :
Kang, H.B. ; Kim, Dong Myong ; Oh, K.Y. ; Roh, J.S. ; Kim, Jonghoon J. ; Ahn, J.H. ; Lee, H.G. ; Kim, D.C. ; Jo, William ; Lee, H.M. ; Cho, S.M. ; Nam, H.J. ; Lee, Jae W. ; Kim, C.S.
Author_Institution :
LG Semicond., Cheongju, South Korea
Abstract :
A working methodology bypasses the conventional cell plate line (PL), mitigating its disadvantages. The methodology utilizes split word lines (SWLs), driven by multi-phased voltage signals. In this scheme there is no need for PL and additional elements, and fabrication is simple and compatible with downscaling of cell area.
Keywords :
cellular arrays; ferroelectric storage; random-access storage; cell area; downscaling; multi-phase-driven circuit; multi-phased voltage signals; split-word-line ferroelectric memory; Capacitors; Electrodes; Fabrication; Ferroelectric materials; Logic; Polarization; Random access memory; Switches; Temperature; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5126-6
DOI :
10.1109/ISSCC.1999.759155
