Title :
PAE Enhancement Methodology for SiGe Power Amplifier in UMTS/W-CDMA Systems
Author :
Deltimple, Nathalie ; Kerhervé, Eric ; Belot, Didier ; Deval, Yann ; Jarry, Pierre
Author_Institution :
IXL Lab., Bordeaux Univ., Talence
Abstract :
This paper demonstrates an integrated two-stage 1.95 GHz UMTS/W-CDMA handset RF reconfigurable power amplifier (PA) implemented in a 0.25mum SiGe BiCMOS technology from ST Microelectronics. By acting on bias circuits, a dynamic control of 1 dB compression point (CP1) and power gain of the structure is realized, according to input signal level. Thus, the power added efficiency (PAE) is improved at low level. At low level, the linear gain is 24 dB and the output CP1 is 26.2 dBm. In order to fulfil requirements, especially on linearity, the output power is 24 dBm in a linear class of operation, with a 32.4% PAE. For lower levels, PAE is improved. A chip has been developed to validate the proposed method
Keywords :
3G mobile communication; BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; code division multiple access; 0.25 micron; 1.95 GHz; 24 dB; BiCMOS technology; ST Microelectronics; SiGe; UMTS/W-CDMA handset; power added efficiency enhancement; power amplifier; 3G mobile communication; BiCMOS integrated circuits; Germanium silicon alloys; Integrated circuit technology; Multiaccess communication; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Telephone sets;
Conference_Titel :
Circuits and Systems, 2006 IEEE North-East Workshop on
Conference_Location :
Gatineau, Que.
Print_ISBN :
1-4244-0416-9
Electronic_ISBN :
1-4244-0417-7
DOI :
10.1109/NEWCAS.2006.250956
