PAE Enhancement Methodology for SiGe Power Amplifier in UMTS/W-CDMA Systems

Author

Deltimple, Nathalie ; Kerhervé, Eric ; Belot, Didier ; Deval, Yann ; Jarry, Pierre

Author_Institution

IXL Lab., Bordeaux Univ., Talence

fYear

2006

fDate

18-21 June 2006

Firstpage

169

Lastpage

172

Abstract

This paper demonstrates an integrated two-stage 1.95 GHz UMTS/W-CDMA handset RF reconfigurable power amplifier (PA) implemented in a 0.25mum SiGe BiCMOS technology from ST Microelectronics. By acting on bias circuits, a dynamic control of 1 dB compression point (CP1) and power gain of the structure is realized, according to input signal level. Thus, the power added efficiency (PAE) is improved at low level. At low level, the linear gain is 24 dB and the output CP1 is 26.2 dBm. In order to fulfil requirements, especially on linearity, the output power is 24 dBm in a linear class of operation, with a 32.4% PAE. For lower levels, PAE is improved. A chip has been developed to validate the proposed method

Keywords

3G mobile communication; BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; code division multiple access; 0.25 micron; 1.95 GHz; 24 dB; BiCMOS technology; ST Microelectronics; SiGe; UMTS/W-CDMA handset; power added efficiency enhancement; power amplifier; 3G mobile communication; BiCMOS integrated circuits; Germanium silicon alloys; Integrated circuit technology; Multiaccess communication; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Telephone sets;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006 IEEE North-East Workshop on

Conference_Location

Gatineau, Que.

Print_ISBN

1-4244-0416-9

Electronic_ISBN

1-4244-0417-7

Type

conf

DOI

10.1109/NEWCAS.2006.250956

Filename

4016987