DocumentCode :
27288
Title :
On the Transient Response of a Complementary (npn 
pnp) SiGe HBT BiCMOS Technology
Author :
Lourenco, Nelson E. ; Fleetwood, Zachary E. ; Seungwoo Jung ; Cardoso, Adilson S. ; Chakraborty, Partha S. ; England, Troy D. ; Roche, Nicholas J.-H ; Khachatrian, Ani ; McMorrow, Dale ; Buchner, Stephen P. ; Melinger, Joseph S. ; Warner, Jeffrey H. ; Pak
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
61
Issue :
6
fYear :
2014
fDate :
Dec. 2014
Firstpage :
3146
Lastpage :
3153
Abstract :
The single-event transient (SET) response of a third-generation bulk C-SiGe ( npn + pnp) BiCMOS platform is investigated for the first time. Pulsed-laser, two-photon absorption experiments show that the pnp SiGe heterojunction bipolar transistor (SiGe HBT) exhibits a significant reduction in sensitive area as well as an improved transient response compared with the npn SiGe HBT. Ion-strike simulations on 3-D TCAD, C-SiGe HBT models agree with experimental findings, showing a reduction in overall transient duration and collected charge for the pnp SiGe HBT. These improvements in device-level SETs are attributed to the n-well isolation layer present in the vertical material stack of the pnp HBT. These results suggest that precision analog, RF/mm-wave, and high-speed digital applications utilizing unhardened, high-performance bulk pnp SiGe HBTs should benefit from an inherently improved SEE response.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; radiation hardening (electronics); technology CAD (electronics); transient response; 3D TCAD; Pulsed laser experiments; SiGe; complementary HBT BiCMOS technology; heterojunction bipolar transistor; single event transient response; two-photon absorption experiments; vertical material stack; BiCMOS integrated circuits; Heterojunction bipolar transistors; Radiation hardening (electronics); Silicon germanium; Single event transients; Transient analysis; C-SiGe; PNP heterojunction bipolar transistors; SiGe HBT; charge collection; complementary bipolar; complementary-SiGe; nanoTCAD; radiation hardening; silicon-germanium technology; single-event effects (SEE); single-event transient (SET);
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2014.2361269
Filename :
6945914
Link To Document :
