• DocumentCode
    2729208
  • Title

    Non-Volatile Memory Technology-Today and Tomorrow

  • Author

    Lu, Chih-Yuan ; Lu, Tao-Cheng ; Liu, Rich

  • Author_Institution
    Macronix Int. Co., Inc., Hsinchu
  • fYear
    2006
  • fDate
    3-7 July 2006
  • Firstpage
    18
  • Lastpage
    23
  • Abstract
    Despite strong scaling limitations for both NOR and NAND flash memories, solutions to continue the Moore´s law are also emerging. For NOR flash memory, 2-bit/cell NROM, BE-SONOS and phase-change chalcogenide memory show promise to scale below 35nm node. For NAND flash memory, new nitride storage devices such as TANOS and BE-SONOS are candidates for < 30 nm devices
  • Keywords
    flash memories; random-access storage; 2-bit/cell NROM; BE-SONOS; Moore law; NAND flash memory; NOR flash memory; TANOS; nonvolatile memory technology; phase-change chalcogenide memory; Biological information theory; Electrons; Explosives; Flash memory; Insulation; MOSFET circuits; Nonvolatile memory; Random access memory; Space technology; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
  • Conference_Location
    Singapore
  • Print_ISBN
    1-4244-0205-0
  • Electronic_ISBN
    1-4244-0206-9
  • Type

    conf

  • DOI
    10.1109/IPFA.2006.250989
  • Filename
    4017014
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2729208