Title :
Twin-GD: A New Twin Gated-Diode Measurement for the Interface Characterization of Ultra-Thin Gate Oxide MOSFET´s with EOT Down to 1nm
Author :
Lee, G.D. ; Chung, S.S. ; Mao, A.Y. ; Lin, W.M. ; Yang, C.W. ; Hsieh, Y.S. ; Chu, K.T. ; Cheng, L.W. ; Tai, H. ; Hsu, L.T. ; Lee, C.R. ; Meng, H.L. ; Tsai, C.T. ; Ma, G.H. ; Chien, S.C. ; Sun, S.W.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
In this paper, a new twin gated-diode (T-GD) method has been greatly improved for the oxide interface characterization of MOS devices with gate oxide as thin as 1 nm (EOT). With the scaling of gate oxide thickness into 1 nm regime, reported GD measurement can not give correct measurement due to gate tunneling leakage current. Here, we provide a simple method to remove this limitation. This method has been demonstrated successfully for the ultra-thin (EOT= 10.2Aring) gate oxide nMOSFET devices. Application of the method to the PBTI effects of high-k gate dielectric devices has been demonstrated. It was found that high-K device has worse gate oxide quality, but its interface damage is less than that of control oxide
Keywords :
MOSFET; high-k dielectric thin films; interface states; semiconductor device measurement; thin film transistors; PBTI effects; high-k gate dielectric devices; oxide interface characterization; twin gated-diode measurement; twin-GD; ultra-thin gate oxide MOSFET; Current measurement; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; Leakage current; MOS devices; MOSFET circuits; Sun; Thickness measurement; Tunneling;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.250992
