Performance and reliability of short-channel MOSFETs with superior oxynitride gate dielectrics fabricated using multiple rapid thermal processing

Author

Shih, D.K. ; Lo, G.Q. ; Ting, W. ; Kwong, D.L.

Author_Institution

Texas Univ., Austin, TX, USA

fYear

1989

fDate

17-19 May 1989

Firstpage

197

Lastpage

201

Abstract

The electrical characteristics of ultrathin oxynitride gate dielectrics prepared by in-situ multiple rapid thermal processing in reactive ambient (O₂ and NH₃) have been studied. Specifically, the conduction mechanism, charge trapping properties, time-dependent breakdown and interface hardness in oxynitride films have been characterized as a function of both RTO (rapid thermal reoxidation) and RTN (rapid thermal nitridation) processing parameters. In addition, N-channel MOSFETs have been fabricated using oxynitrides as gate dielectrics and their hot carrier immunity has been examined and compared with that of devices using pure thermal oxides. Devices with superior electrical characteristics and reliability have been produced by optimizing RTO/RTN parameters

Keywords

dielectric thin films; hot carriers; insulated gate field effect transistors; oxidation; reliability; charge trapping properties; conduction mechanism; electrical characteristics; gate dielectrics; hot carrier immunity; interface hardness; multiple rapid thermal processing; oxynitride gate dielectrics; rapid thermal nitridation; rapid thermal reoxidation; reactive ambient; reliability; short-channel MOSFETs; thermal oxides; time-dependent breakdown; Annealing; Conductive films; Dielectric devices; Electric breakdown; Electric variables; Fabrication; Hot carriers; MOSFETs; Nitrogen; Rapid thermal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/VTSA.1989.68613

Filename

68613