Gate-Oxide Reliability on CMOS Analog Amplifiers in a 130-nm Low-Voltage CMOS Processes

Author

Chen, Jung-Sheng ; Ker, Ming-Dou

Author_Institution

Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu

fYear

2006

fDate

3-7 July 2006

Firstpage

45

Lastpage

48

Abstract

The effect of gate-oxide reliability in MOSFET on common-source amplifiers is investigated with the non-stacked and stacked structures in a 130-nm low-voltage CMOS process. The supply voltage of 2.5 V is applied on the amplifiers to accelerate and observe the impact of gate-oxide reliability on circuit performances including small-signal gain, unity-gain frequency, and output DC voltage level under DC stress and AC stress with DC offset, respectively. The small-signal parameters of amplifier with non-stacked structure strongly degrade under such overstress conditions. The gate-oxide reliability in analog circuit can be improved by stacked structure for small-signal input and output applications

Keywords

CMOS analogue integrated circuits; MOSFET; amplifiers; semiconductor device reliability; 130 nm; 2.5 V; AC stress; CMOS analog amplifiers; DC offset; DC stress; common-source amplifiers; gate-oxide reliability; low-voltage CMOS processes; nonstacked structures; output DC voltage level; small-signal gain; small-signal parameters; stacked structures; unity-gain frequency; Acceleration; Analog circuits; CMOS analog integrated circuits; CMOS process; Electric breakdown; Frequency; MOSFET circuits; Stress; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the

Conference_Location

Singapore

Print_ISBN

1-4244-0205-0

Electronic_ISBN

1-4244-0206-9

Type

conf

DOI

10.1109/IPFA.2006.250994

Filename

4017019