Using Probing Techniques to Identify and Study High Leakage Issues in the Development of 90nm Process and Below

Author

Hendarto, E. ; Mai, Zicong ; Tan, P.K. ; Lek, A. ; Lau, B. ; Lam, J. ; Chim, W.K.

Author_Institution

Dept. of Technol. Dev., Chartered Semicond. Mfg Ltd, Singapore

fYear

2006

fDate

3-7 July 2006

Firstpage

58

Lastpage

62

Abstract

The combined use of scanning probe microscope based techniques, namely conductive atomic force microscopy (C-AFM) and tunneling atomic force microscopy (TUNA), and nanoprobing technique is presented. In 90 nm process and below, C-AFM identifies leakage by current mapping, while TUNA measures the current-voltage (I-V) curves of different contacts to study the integrity of individual contacts. Nanoprobing is used to obtain and compare the I-V characteristics of good and leaky transistors

Keywords

atomic force microscopy; leakage currents; nanoelectronics; C-AFM; TUNA; conductive atomic force microscopy; current mapping; current-voltage measurement; high leakage issues; nanoprobing technique; scanning probe microscope; tunneling atomic force microscopy; Atomic force microscopy; Atomic measurements; Current measurement; Failure analysis; Nanoscale devices; Photonic crystals; Probes; Scanning electron microscopy; Transistors; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the

Conference_Location

Singapore

Print_ISBN

1-4244-0205-0

Electronic_ISBN

1-4244-0206-9

Type

conf

DOI

10.1109/IPFA.2006.250997

Filename

4017022