Title :
Hot-Carrier Reliability of NLDEMOS in 0.13μm SOI CMOS Technology
Author :
Lachenal, D. ; Rey-Tauriac, Y. ; Boissonnet, L. ; Reynard, B. ; Bravaix, A.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
This paper presents reliability investigations in NLDEMOS transistor in 0.13μm SOI CMOS technology. Reliability tests under hot carrier injections (HCI) for different gate-lengths show two different degradation mechanisms. The modification of current path with short overlap (Olap) due to oblique equi-potential lines and the increase in the vertical electrical field under the gate edge at low V g lead to distinguish Nit interface trap generation from the source side injection
Keywords :
CMOS integrated circuits; MOSFET; hot carriers; interface states; semiconductor device reliability; silicon-on-insulator; 0.13 micron; CMOS; NLDEMOS transistor; SOI; degradation mechanisms; hot carrier injections; hot carrier reliability; interface trap generation; reliability tests; CMOS technology; Condition monitoring; Degradation; Hot carriers; Human computer interaction; MOSFETs; Radio frequency; Stress; Testing; Threshold voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.251002
