DocumentCode
2729431
Title
Trapped Charge Distribution during the P/E Cycling of SONOS Memory
Author
Pang, Huiqing ; Pan, Liyang ; Sun, Lei ; Wu, Dong ; Zhu, Jun
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing
fYear
2006
fDate
3-7 July 2006
Firstpage
84
Lastpage
87
Abstract
Two phases during the P/E cycling of 0.18mum SONOS are observed using a combined charge pumping method to extract the trapped charge distribution: holes accumulation at the initial term, and electrons accumulation after long term cycling. Better endurance characteristic is obtained through optimization to P/E condition and process technology
Keywords
electron traps; hole traps; semiconductor storage; silicon compounds; 0.18 micron; P/E cycling; SONOS memory; charge pumping; electrons accumulation; endurance characteristic; holes accumulation; trapped charge distribution; CMOS process; CMOS technology; Channel hot electron injection; Charge carrier processes; Charge pumps; Degradation; Electron traps; Flash memory; SONOS devices; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location
Singapore
Print_ISBN
1-4244-0205-0
Electronic_ISBN
1-4244-0206-9
Type
conf
DOI
10.1109/IPFA.2006.251003
Filename
4017028
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