Technology Reliability Qualification of a 65nm CMOS Cu/Low-k BEOL Interconnect

Author

Chen, F. ; Li, B. ; Lee, T. ; Christiansen, C. ; Gill, J. ; Angyal, M. ; Shinosky, M. ; Burke, C. ; Hasting, W. ; Austin, R. ; Sullivan, T. ; Badami, D. ; Aitken, J.

Author_Institution

IBM Microelectron., Essex Junction, VT

fYear

2006

fDate

3-7 July 2006

Firstpage

97

Lastpage

105

Abstract

During the development and qualification of a 300mm low-k/Cu back end of line (BEOL) technology, the long-term reliability of such interconnects including low-k time-dependent dielectric breakdown (TDDB), Cu electromigration (EM), Cu stress migration (SM), and Cu/low-k thermal behavior are rapidly becoming one of the most critical challenges. In this paper, a comprehensive reliability evaluation for 65nm Cu/low-k interconnects is reported and various reliability issues associated with process integration and material optimization during initial development stage are discussed. Finally, we demonstrate that with careful process and materials optimization, a superior interconnect reliability performance at the 65nm technology node can be achieved for 300mm fabrication. The projected reliability lifetimes of TDDB, EM, and SM meet the most stringent reliability targets and criteria

Keywords

CMOS integrated circuits; copper; cryogenic electronics; electric breakdown; electromigration; integrated circuit interconnections; semiconductor device reliability; 300 mm; 65 nm; BEOL; CMOS; Cu; back end of line; electromigration; interconnect reliability; low-k interconnect; material optimization; stress migration; thermal conductance; time dependent dielectric breakdown; CMOS technology; Dielectric breakdown; Dielectric materials; Electromigration; Fabrication; Materials reliability; Qualifications; Rapid thermal processing; Samarium; Thermal stresses; Cu interconnect; ILD; Jdc; Jrms; electromigration; low-k; metal diffusion; process integration; reliability; stress migration; thermal; thermal conductance; time-dependent dielectric breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the

Conference_Location

Singapore

Print_ISBN

1-4244-0205-0

Electronic_ISBN

1-4244-0206-9

Type

conf

DOI

10.1109/IPFA.2006.251007

Filename

4017032