Title :
Thermal Reliability of Cu/low -κ(Black-DiamondTM, BD) Interconnects on Flexible Organic Substrate
Author :
Li, H.Y. ; Bai, J.S. ; Chua, H.M. ; Guo, L.H. ; Lo, G.Q.
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
This paper reports burn-in test results of Cu/low-K (BD) interconnects on flexible organic substrate (FR-4,0.1mm) and Si substrate. The electrical yields of via chains (via number: 11,182, via size: 0.26 to 0.5 mum) onto flexible organic substrate remain more than 50% and surviving via chains exhibit average resistance shift of 7.3% which is comparable to Si substrate (6.8%) after 524hrs (388hrs/75degC and 136hrs/150degC) burn-in tests
Keywords :
copper; cryogenic electronics; integrated circuit interconnections; integrated circuit reliability; silicon; Cu; Si; burn in test; electrical yields; low-k interconnects; resistance shift; thermal reliability; Buffer layers; CMOS technology; Electronic equipment testing; Etching; Flexible electronics; Integrated circuit interconnections; Microelectronics; Silicon on insulator technology; Substrates; Wafer bonding;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.251010
