Simulation Study of Hot-electron Reliability in strained-Si n-MOSFETs

Author

Maiti, C.K. ; Mahato, S.S. ; Saha, A.R.

Author_Institution

Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur

fYear

2006

fDate

3-7 July 2006

Firstpage

141

Lastpage

145

Abstract

In this paper, we demonstrate for the first time via technology computer aided design (TCAD), the enhancement in both the ac and dc performances for process-induced strained-Si MOSFETs over bulk-Si and a comparison of process-induced strained and substrate-induced strained-Si MOSFETs. In addition, we present the hot-electron degradation characteristics for strained-Si n-MOSFETs fabricated in both the substrate strain (SS) and process-induced strain (PSS) process flows via TCAD. Effects of both the SS and PSS stress on high vertical electric field mobility and threshold voltage shift in n-MOSFETs are also reported

Keywords

MOSFET; hot carriers; semiconductor device reliability; silicon; technology CAD (electronics); Si; TCAD; ac performances; dc performances; electric field mobility; hot electron degradation; hot electron reliability; n-MOSFET; process induced strain; substrate strain; threshold voltage shift; CMOS technology; Capacitive sensors; Degradation; Germanium silicon alloys; MOSFET circuits; Silicon germanium; Stress; Substrates; Tensile strain; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the

Conference_Location

Singapore

Print_ISBN

1-4244-0205-0

Electronic_ISBN

1-4244-0206-9

Type

conf

DOI

10.1109/IPFA.2006.251016

Filename

4017041