Title :
Simulation Study of Hot-electron Reliability in strained-Si n-MOSFETs
Author :
Maiti, C.K. ; Mahato, S.S. ; Saha, A.R.
Author_Institution :
Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur
Abstract :
In this paper, we demonstrate for the first time via technology computer aided design (TCAD), the enhancement in both the ac and dc performances for process-induced strained-Si MOSFETs over bulk-Si and a comparison of process-induced strained and substrate-induced strained-Si MOSFETs. In addition, we present the hot-electron degradation characteristics for strained-Si n-MOSFETs fabricated in both the substrate strain (SS) and process-induced strain (PSS) process flows via TCAD. Effects of both the SS and PSS stress on high vertical electric field mobility and threshold voltage shift in n-MOSFETs are also reported
Keywords :
MOSFET; hot carriers; semiconductor device reliability; silicon; technology CAD (electronics); Si; TCAD; ac performances; dc performances; electric field mobility; hot electron degradation; hot electron reliability; n-MOSFET; process induced strain; substrate strain; threshold voltage shift; CMOS technology; Capacitive sensors; Degradation; Germanium silicon alloys; MOSFET circuits; Silicon germanium; Stress; Substrates; Tensile strain; Uniaxial strain;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.251016
