Title :
Failure analysis of shallow trench isolated ESD structures
Author :
Never, James M. ; Voldman, Steven H.
Author_Institution :
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
Abstract :
Scanning-electron microscopes and atomic-force microscopes are used to analyze surface and sub-surface ESD-induced failure mechanisms in 0.25- and 0.5-/spl mu/m shallow trench isolated CMOS technology ESD structures and n-channel MOSFETs; ESD failure-mechanism types are characterized and classified; and additional failure-analysis techniques and tools are discussed.
Keywords :
CMOS integrated circuits; atomic force microscopy; electrostatic discharge; failure analysis; integrated circuit technology; isolation technology; scanning electron microscopy; 0.25 micron; 0.50 micron; CMOS technology; ESD failure analysis; atomic force microscopy; n-channel MOSFETs; scanning electron microscopy; shallow trench isolation; CMOS technology; Electrostatic discharge; Failure analysis; Isolation technology; MOSFETs; Microscopy;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1995
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
1-878303-59-7
DOI :
10.1109/EOSESD.1995.478295
