DocumentCode :
2729625
Title :
Melt filaments in n+pn+ lateral bipolar ESD protection devices
Author :
Clark, Neal K. ; Parat, Krishna ; Maloney, Timothy J. ; Kim, Yudong
Author_Institution :
Intel Corp., Folsom, CA, USA
fYear :
1995
fDate :
12-14 Sept. 1995
Firstpage :
295
Lastpage :
303
Abstract :
Lateral bipolar n/sup +/pn/sup +/ devices, with thick field oxide (TFO) separating the collector and emitter, are often used in snapback mode as protection devices for MOS ESD circuit protection. ESD testing for Human Body Model (HBM), Machine Model (MM) and Charged Device Model (CDM) waveforms was performed on a family of TFO cells which varied the gate length (bipolar base width) as the experimental parameter. For MM and CDM, the data showed a dependence of withstand voltage on the gate length, indicating that longer gate lengths improve performance; while for HBM, withstand voltage was independent of the gate length. The devices exhibited failure modes that manifested as low level current leakage. Failure analysis identified the current leakage sites as melt filaments primarily localized at the TFO ends. Filament distribution was seen to be a function of gate length for MM. Two possible mechanisms are presented to account for the observed filament distribution and follow up experiments are suggested to test the validity of each.
Keywords :
CMOS integrated circuits; MOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit reliability; protection; ESD protection devices; charged device model; failure modes; filament distribution; gate length; human body model; low level current leakage; machine model; melt filaments; n/sup +/pn/sup +/ lateral bipolar devices; snapback mode; thick field oxide; withstand voltage; Biological system modeling; Circuit testing; Electrostatic discharge; Failure analysis; Humans; Performance evaluation; Protection; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1995
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
1-878303-59-7
Type :
conf
DOI :
10.1109/EOSESD.1995.478297
Filename :
478297
Link To Document :
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