• DocumentCode
    2729636
  • Title

    Quantifying ESD/EOS latent damage and integrated circuit leakage currents

  • Author

    Song, Miryeong ; Eng, David C. ; MacWilliams, Kenneth P.

  • Author_Institution
    Aerosp. Corp., Los Angeles, CA, USA
  • fYear
    1995
  • fDate
    12-14 Sept. 1995
  • Firstpage
    304
  • Lastpage
    310
  • Abstract
    The correlation of IC leakage current with ESD/EOS latent damage is studied. Quantification of latent damage as a function of leakage current is determined for the two primary ESD/EOS latent damage mechanisms. This relationship explicitly shows the reduction in lifetime with ESD/EOS damage (type dependent) and also offers the possibility for a simple screening procedure for latent damage.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit reliability; leakage currents; ESD/EOS latent damage; IC leakage current; integrated circuit leakage currents; screening procedure; Earth Observing System; Electrostatic discharge; Leakage current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1995
  • Conference_Location
    Phoenix, AZ, USA
  • Print_ISBN
    1-878303-59-7
  • Type

    conf

  • DOI
    10.1109/EOSESD.1995.478298
  • Filename
    478298
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2729636