• DocumentCode
    2729659
  • Title

    Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress

  • Author

    Holzer, S. ; Hollauer, C. ; Ceric, H. ; Karner, M. ; Grasser, T. ; Langer, E. ; Selberherr, S.

  • Author_Institution
    Inst. for Microelectron., Wien
  • fYear
    2006
  • fDate
    3-7 July 2006
  • Firstpage
    154
  • Lastpage
    157
  • Abstract
    We presented a transient electro-thermal analysis with STAP considering self-heating. Thermo-mechanical simulators, e.g. FEDOS, are coupled to provide appropriated input data for electromigration analysis to obtain predictive results. The presented electro-thermal results depict the high temperature gradients close to heat sources and heat sinks. Further regions of high risk of electromigration are presented as results of thermo-mechanical simulations. The vias as well as edges and corners of interconnects in general are highly stressed regions due to the mismatch of thermal volume expansion coefficients and due to weak material adhesion of material interfaces
  • Keywords
    electromigration; heat sinks; integrated circuit interconnections; thermal analysis; thermal expansion; thermal stresses; 3D transient interconnect analysis; STAP; electromigration analysis; electrothermal analysis; heat sinks; heat sources; material adhesion; material interfaces; mechanical stress; self heating; thermal volume expansion coefficients; thermomechanical simulators; Conducting materials; Electromigration; Equations; Microelectronics; Temperature distribution; Thermal conductivity; Thermal expansion; Thermal stresses; Thermomechanical processes; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
  • Conference_Location
    Singapore
  • Print_ISBN
    1-4244-0205-0
  • Electronic_ISBN
    1-4244-0206-9
  • Type

    conf

  • DOI
    10.1109/IPFA.2006.251019
  • Filename
    4017044