DocumentCode
2729659
Title
Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress
Author
Holzer, S. ; Hollauer, C. ; Ceric, H. ; Karner, M. ; Grasser, T. ; Langer, E. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., Wien
fYear
2006
fDate
3-7 July 2006
Firstpage
154
Lastpage
157
Abstract
We presented a transient electro-thermal analysis with STAP considering self-heating. Thermo-mechanical simulators, e.g. FEDOS, are coupled to provide appropriated input data for electromigration analysis to obtain predictive results. The presented electro-thermal results depict the high temperature gradients close to heat sources and heat sinks. Further regions of high risk of electromigration are presented as results of thermo-mechanical simulations. The vias as well as edges and corners of interconnects in general are highly stressed regions due to the mismatch of thermal volume expansion coefficients and due to weak material adhesion of material interfaces
Keywords
electromigration; heat sinks; integrated circuit interconnections; thermal analysis; thermal expansion; thermal stresses; 3D transient interconnect analysis; STAP; electromigration analysis; electrothermal analysis; heat sinks; heat sources; material adhesion; material interfaces; mechanical stress; self heating; thermal volume expansion coefficients; thermomechanical simulators; Conducting materials; Electromigration; Equations; Microelectronics; Temperature distribution; Thermal conductivity; Thermal expansion; Thermal stresses; Thermomechanical processes; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location
Singapore
Print_ISBN
1-4244-0205-0
Electronic_ISBN
1-4244-0206-9
Type
conf
DOI
10.1109/IPFA.2006.251019
Filename
4017044
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