DocumentCode :
2729659
Title :
Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress
Author :
Holzer, S. ; Hollauer, C. ; Ceric, H. ; Karner, M. ; Grasser, T. ; Langer, E. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Wien
fYear :
2006
fDate :
3-7 July 2006
Firstpage :
154
Lastpage :
157
Abstract :
We presented a transient electro-thermal analysis with STAP considering self-heating. Thermo-mechanical simulators, e.g. FEDOS, are coupled to provide appropriated input data for electromigration analysis to obtain predictive results. The presented electro-thermal results depict the high temperature gradients close to heat sources and heat sinks. Further regions of high risk of electromigration are presented as results of thermo-mechanical simulations. The vias as well as edges and corners of interconnects in general are highly stressed regions due to the mismatch of thermal volume expansion coefficients and due to weak material adhesion of material interfaces
Keywords :
electromigration; heat sinks; integrated circuit interconnections; thermal analysis; thermal expansion; thermal stresses; 3D transient interconnect analysis; STAP; electromigration analysis; electrothermal analysis; heat sinks; heat sources; material adhesion; material interfaces; mechanical stress; self heating; thermal volume expansion coefficients; thermomechanical simulators; Conducting materials; Electromigration; Equations; Microelectronics; Temperature distribution; Thermal conductivity; Thermal expansion; Thermal stresses; Thermomechanical processes; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
Type :
conf
DOI :
10.1109/IPFA.2006.251019
Filename :
4017044
Link To Document :
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