• DocumentCode
    2729862
  • Title

    Process solutions and polymer materials for 3D-WLP through silicon via filling

  • Author

    Bouchoucha, M. ; Chausse, P. ; Henry, D. ; Sillon, N.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2010
  • fDate
    1-4 June 2010
  • Firstpage
    1696
  • Lastpage
    1698
  • Abstract
    This paper deals with the development of a process for medium density through silicon via (TSV) polymer filling. This solution is driven by reliability considerations. Firstly, a set of specifications concerning the polymer selection is presented. Secondly, the process optimization with two kinds of polymers is presented: a liquid resin and a dry film resist. Issues with both of the solutions are also discussed. Different types of TSV are studied (shapes and dimensions). Finally, material characterizations are achieved in order to determine the ability of the polymer to be integrated in the TSV and 3D stacking processes. Other characterizations will be useful for further thermo-mechanical studies.
  • Keywords
    Copper; Filling; Polymer films; Resins; Resists; Silicon; Stacking; Temperature; Thermomechanical processes; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4244-6410-4
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2010.5490748
  • Filename
    5490748