DocumentCode
2729862
Title
Process solutions and polymer materials for 3D-WLP through silicon via filling
Author
Bouchoucha, M. ; Chausse, P. ; Henry, D. ; Sillon, N.
Author_Institution
STMicroelectronics, Crolles, France
fYear
2010
fDate
1-4 June 2010
Firstpage
1696
Lastpage
1698
Abstract
This paper deals with the development of a process for medium density through silicon via (TSV) polymer filling. This solution is driven by reliability considerations. Firstly, a set of specifications concerning the polymer selection is presented. Secondly, the process optimization with two kinds of polymers is presented: a liquid resin and a dry film resist. Issues with both of the solutions are also discussed. Different types of TSV are studied (shapes and dimensions). Finally, material characterizations are achieved in order to determine the ability of the polymer to be integrated in the TSV and 3D stacking processes. Other characterizations will be useful for further thermo-mechanical studies.
Keywords
Copper; Filling; Polymer films; Resins; Resists; Silicon; Stacking; Temperature; Thermomechanical processes; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location
Las Vegas, NV, USA
ISSN
0569-5503
Print_ISBN
978-1-4244-6410-4
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2010.5490748
Filename
5490748
Link To Document