DocumentCode
2729880
Title
Development of novel carbon nanotube TSV technology
Author
Gupta, Anurag ; Kannan, Sukeshwar ; Kim, Bruce C. ; Mohammed, Falah ; Ahn, Byoungchul
Author_Institution
Univ. of Alabama - Tuscaloosa, Tuscaloosa, AL, USA
fYear
2010
fDate
1-4 June 2010
Firstpage
1699
Lastpage
1702
Abstract
The design and development of reliable 3D integrated systems require high performance interconnects, which in turn are largely dependent on the choice of filler material used in TSV. Cu, W, and poly-silicon have been explored as filler materials; however, issues like thermal incompatibility, electromigration and high resistivity are still a bottleneck. In this paper, we investigate SW-CNT bundles as a prospective filler material for TSV.
Keywords
Carbon nanotubes; Conducting materials; Copper; Electromigration; Fabrication; Materials reliability; Packaging; Semiconductor materials; Space technology; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location
Las Vegas, NV, USA
ISSN
0569-5503
Print_ISBN
978-1-4244-6410-4
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2010.5490749
Filename
5490749
Link To Document