DocumentCode :
2729909
Title :
A 640/spl times/512 CMOS image sensor with ultra wide dynamic range floating-point pixel-level ADC
Author :
Yang, D.X.D. ; El Gamal, Abbas ; Fowler, B. ; Hui Tian
Author_Institution :
Inf. Syst. Lab., Stanford Univ., CA, USA
fYear :
1999
fDate :
17-17 Feb. 1999
Firstpage :
308
Lastpage :
309
Abstract :
The dynamic range of an image sensor is often not wide enough to capture scenes with both high lights and dark shadows. A 640/spl times/512 image sensor with Nyquist rate pixel level ADC implemented in a 0.35 /spl mu/m CMOS technology shows how a pixel level ADC enables flexible efficient implementation of multiple sampling. Since pixel values are available to the ADCs at all times, the number and timing of the samples as well as the number of bits obtained from each sample can be freely selected without the long readout time of APS. Typically, hundreds of nanoseconds of settling time per row are required for APS readout. In contrast, using pixel level ADC, digital data is read out at fast SRAM speeds. This demonstrates another fundamental advantage of pixel level ADC-the ability to programmably widen dynamic range with no loss in SNR.
Keywords :
CMOS image sensors; analogue-digital conversion; floating point arithmetic; 0.35 micron; 327680 pixel; 512 pixel; 640 pixel; CMOS image sensor; Nyquist rate pixel level ADC; SRAM speeds; dynamic range; floating-point pixel-level ADC; multiple sampling; readout time; settling time; CMOS image sensors; CMOS technology; Dynamic range; Image sampling; Image sensors; Layout; Lighting; Pixel; Signal generators; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
0-7803-5126-6
Type :
conf
DOI :
10.1109/ISSCC.1999.759263
Filename :
759263
Link To Document :
بازگشت